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SN74AHCT125-Q1: input pin

Genius 4730 points
Part Number: SN74AHCT125-Q1

Question1:

Is there protection diode (clamp diode )  in input pin ?

Question2:

When VCC=0V,Does this part accept to be applied 0V to 3.3V to input pin ?

  • Hello kura,

    The answer you are looking for can be found in greater detail here.

    e2e.ti.com/.../3537.02-input-parameters

    1. For this device there is no clamp diode between the input and Vcc.
    2. The Abs Max for the input voltage is listed as 7 V, which is independent of Vcc, meaning that a voltage higher than VCC can be applied to the input without causing damage.

    Thanks!
    - Karan
  • Karan-san

    Thank you for your reply.Customer has additional questions.

    Question3:

    We understand  there is no clamp diode between the input and Vcc.

    Please let us know how to protect this part from ESD.Please let us know your design concept of this part.

    Question4 

    Please send equivalent circuit of input pin to us.

  • There is the equivalent of a diode between input and GND that simply clamps negative ESD, and acts like a zener for positive ESD. (The following transistors do not act like a diode, so for normal voltages, no current can flow from the input to VCC.)

    The application note Advanced High-Speed CMOS (AHC) Logic Family (SCAA034) says:

    Electrostatic Discharge

    ESD occurs when a buildup of static charges on one surface arcs through a dielectric to another surface that has the opposite charge. The end effect is the ESD causes a short between the two surfaces. These damaged devices might pass normal data sheet tests, but eventually fail. The input and output protection circuitry designed by TI provides immunity to over 2000 V in the human-body-model test, over 200 V in the machine-model test, and over 1000 V in the charged-device model test.

    Figure 1 shows the circuitry implemented to provide protection for the input gates against ESD. The primary protection device is a low-voltage-triggered silicon-controlled rectifier (LVTSCR). During an ESD event, most of the current is diverted through the LVTSCR. Additional protection is provided by the resistor and secondary clamp transistors, which break down during an ESD event and protect the gate oxides.

    Furthermore, section 2.3.1 of the AHC/AHCT Designer's Guide (SCLA013) says:

    Figure 12 shows protective circuits used for advanced high-speed CMOS devices. To meet the requirements outlined previously, the protective circuit is constructed in two stages. The input is first protected by a thyristor consisting of transistors Q2 and Q3. This provides coarse protection. If the input voltage rises above about 15 V, transistor Q1 breaks down and fires the thyristor. The latter then short circuits the high currents. Resistors R1 and R2 have values of only a few ohms. Therefore, the holding current of the thyristor is several tens of mA. When the current is reduced again at the end of the discharge, the thyristor is extinguished. Transistors Q4, Q5, and Q6 operate as fine protection and are intended principally to protect the input from excessive voltages. When there are overvoltages at the input, these transistors are driven into breakdown and limit the voltage, while resistor R3 limits the current.