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SN74AXC8T245: Level shifter for Gigabit RGMII lines running @ 125MHz DDR rate

Part Number: SN74AXC8T245
Other Parts Discussed in Thread: SN74LVC8T245, SN74AVC8T245

I see TI has proposed either SN74LVC8T245 or SN74AVC8T245 level shifters for translating between 1.8V and 3.3V for Gigabit RGMII with 125MH clock.

The plot shown in TI's app note ( SCEA065A–November 2018–Revised May 2019) indicates that the rise/fall time of this level shifter could be upto 1.5ns (see snapshot from TI's app note below; if you measure 20% to 80% Vih Vil levels, rise tall comes up to ~1.5ns). Since the setup/hold time for RGMII is ~2ns, there is not much margin left. Also, the following app note indicates this plot is with standard loading at room. So if you consider worst case across temperature, I wonder if this part will work. Can TI look into this and provide assurance/arguments with actual data and calculations to prove otherwise?