Hi everyone,
we are currently working with the MSPM0L1306SDYY.
We are about to drive low-gate-charge MOSFETs with digital outputs of the MCU via a 100 Ohm series resistor:
With a gate charge of 0.5nC and a switching frequency of 1.8MHz, the mean sourcing and sinking currents amount to 0.5nC*1.8MHz=900uA lying well inside the current limits given in the datasheet.
However, peak currents will be much higher. As we operate the MCU at 3.3V, with DIO's output impedance neglected, the peak current amounts to 3.3V/100R=33mA.
We have built up a prototype for testing the digital output behavior and the behavior was satisfactory.
Can you tell me whether this kind of connection can cause any damage to the MCU? Are there guidelines from TI for dimensioning these kind of RC-circuits?
FYI: The input capacitance amounts to 50pF.
Best regards
Samuel