Hi,
In the EEPROM writing sample code, it always call DL_FlashCTL_unprotectSector() and then call DL_FlashCTL_programMemoryFromRAM64() to
write 8 bytes to EEPROM.
If we have 128 bytes or more data, could we just call DL_FlashCTL_unprotectSector() one time and then use DL_FlashCTL_programMemoryFromRAM64() several times to flash all data?
Meanwhile, when doing EEPROM writing, if there's an IRQ coming, will EEPROM writing got impacted? Shall we disable IRQ while doing EEPROM writing?