Tool/software:
Dear Supportteam,
we are working with secondary Bootloader on MSPM0g3507. We modified the .cmd file for our Project like:
MEMORY
{
FLASH (RX) : origin = 0x00000000, length = 0x00001000
FLASH2 (RX) : origin = 0x00004000, length = 0x0001C000
SRAM (RWX) : origin = 0x20200000, length = 0x00008000
BCR_CONFIG (R) : origin = 0x41C00000, length = 0x00000080
BSL_CONFIG (R) : origin = 0x41C00100, length = 0x00000080
}
SECTIONS
{
.intvecs: > 0x00000000
.text : palign(8) {} >> FLASH | FLASH2
.const : palign(8) {} > FLASH | FLASH2
.cinit : palign(8) {} > FLASH | FLASH2
.pinit : palign(8) {} > FLASH | FLASH2
.rodata : palign(8) {} > FLASH | FLASH2
.ARM.exidx : palign(8) {} > FLASH | FLASH2
.init_array : palign(8) {} > FLASH | FLASH2
.binit : palign(8) {} > FLASH | FLASH2
.TI.ramfunc : load = FLASH, palign(8), run=SRAM, table(BINIT)
.vtable : > SRAM
.args : > SRAM
.data : > SRAM
.bss : > SRAM
.sysmem : > SRAM
.stack : > SRAM (HIGH)
.BCRConfig : {} > BCR_CONFIG
.BSLConfig : {} > BSL_CONFIG
}
this leads to above warning:
warning #10092-D: split placement (>>) ignored for ".text": cannot split object with PALIGN operator
and complete object code is always placed behind the bootloader, no chance for using the first 4kB (0x1000) for .text so we get:
name origin length used unused attr fill
---------------------- -------- --------- -------- -------- ---- --------
FLASH 00000000 00001000 000003a8 00000c58 R X
FLASH2 00004000 0001c000 00003eb0 00018150 R X
this means 3160 unused bytes in FLASH region.
Is there a simple solution for my configuration?
As I want to use both flash regions in combination. Especially as we involved the eeprom emulation after the bootloader image.
Or is the only solution to place the secondary bootloader on address 0x400 to reduce the memory hole?
