MSPM0G3519: EEPROM emulation in DATA bank

rafael flores

Part Number: MSPM0G3519

Tool/software:

Hi, I want to implement EEPROM emulation type B in DATA bank and have some doubts:

1) its enough just to set #define EEPROM_EMULATION_ADDRESS FLASHCTL_DATA_ADDRESS (0x41d00000) or something between 0x41D0.0000 to 0x41D0.3FFF ?

2) from datasheet "Up to 32 application-chosen sectors from the main flash bank(s) or data bank can be used as high endurance sectors. This enables
applications that frequently update flash data such as EEPROM emulation." How does it work for select tha data bank as high endurance sectors?

3) As i understand if I emulate in data bank I can keep running code in bank0 (will have to change/create polling parts of EEPROM emulation code) is that correct?

4) Why EEPROM_TypeB_init() function transfer data items even if sector is not full? it affects the endureance calculation since my application can have some power ciclyes a day.

Thanks in advance

4 months ago

+1 Cash Hao11 4 months ago

TI__Mastermind 46765 points

Hi,

1. It should be okay to set it as 0x41d00000.

2. There is no configuration here. You can directly use any sector as high endurance sector.

3. Yes, it is correct.

4. The EEPROM_TypeB_init() function is designed as when there is a power up, it will transfer the data. Customer can modify this function it they do not need this feature.

Best regards,

Cash Hao

0 rafael flores 4 months ago in reply to Cash Hao11

Intellectual 340 points

Thank you for your help Cash Hao, about high endurance sectors, I couldn't find an explanation on how does it works in the TRM, what if need to use more than 32 sectors, wich one's will be high endurance, I found this document https://www.ti.com/content/dam/videos/external-videos/en-us/10/3816841626001/mspm0-flash-intro.mp4/subassets/mspm0-flash-module-presentation.pdf that says "Erase/program cycle endurance (lower 32kB flash) is 100k cycles for EEPROM emulation application Erase/program cycle endurance (remaining flash) is 10k cycles"

0 Cash Hao11 4 months ago in reply to rafael flores

TI__Mastermind 46765 points

Hi,

I understand the description in the document could be confusing. We have checked with our internal team, and confirmed that user can use either sector as high endurance sector. There is no differences between sectors on the hardware side.

Best regards,

Cash Hao

0 rafael flores 4 months ago in reply to Cash Hao11

Intellectual 340 points

Can you helpme, I set EEPROM_EMULATION_ADDRESS to FLASHCTL_DATA_ADDRESS (0x41d00000) and the code stucks in

void Default_Handler(void)
{
    /* Enter an infinite loop. */
    while (1) {
    }
}

by debuggin I can see that happens in the line

Temp0 = *CheckGroupPointer;

from EEPROM_TypeB_checkFormat()

0 Cash Hao11 4 months ago in reply to rafael flores

TI__Mastermind 46765 points

Hi,

I am testing on the eeprom_emulation_type_b_LP_MSPM0G3519_nortos_ticlang project in SDK v2.04.00.06.

I do not get any issue there.

Best regards,

Cash Hao

0 rafael flores 4 months ago in reply to Cash Hao11

Intellectual 340 points

Hi, I tried both examples provided for type b with the same result, then I changed the emulation address to 0x41d00078 and it start working fine, I set back the 0x41d00000 and its still working, I don't know what happened, it could be that I exceed the Maximum number of write operations allowed per word line when I was testing the DL before, read operation can be affected by this?

0 Cash Hao11 4 months ago in reply to rafael flores

TI__Mastermind 46765 points

Hi,

The write operations allowed per word line will be cleared after erase. So, I doubt it is the root cause.

Since it is also working now on your side, can we close this thread?

Best regards,

Cash Hao

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MSPM0G3519: EEPROM emulation in DATA bank