This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

Does ECC Error Detection should be disabled during Flash Programming?



Hello Support,

Attached is a snapshot from spna117a.pdf [F035 130nm Device] which mentions that ECC Error Detection/Reporting shall be disabled inside Cortex-R4 Core as well as inside Flash Wrapper during Flash Programming.
Is that valid for Bank 0 as well as Bank 7 Programming for F021 65nm device and if so why?

Thank you.
Regards
Pashan

  • Pashan,

    There is a similar comment in the F021 Flash API Reference Guide:

    The wording is a little weaker I think because we now have a part (not available as a catalog product) where the ECC cannot be disabled, and this causes issue with Blank-Check as noted when it talks about 'L2FMC'.  In other words, since erased flash will have a bad ECC it's easier if you turn ECC off during these operations. 

    -Anthony

  • Hello Anthony,

    Thank you for the answer.
    I understood now that Blank Check will have the possibility of failure when ECC is enabled.

    Question is does PROGRAMMING of Flash Cell [Bank 0 or Bank 7 (FLEE)] depends in any way when ECC is enabled within Cortex-R4 core and inside Flash Wrapper?

    Thank you.
    Regards
    Pashan

  • Pashan,

    No, the ECC in the flash has to be explicitly programmed, and it appears in a different space in the memory map.

    It's totally different than the SRAM where a valid syndrome is written back to memory in parallel with the data write by the CPU's logic.

    -Anthony

  • Pashan,

    F021 is different from F035 in that the ECC values can be written at the same time as the data, whereas in F035 it would take 3 programming commands to write the 64 bits of data and its corresponding ECC.  Therefore, erased memory is the only problematic operation that could cause ECC errors when read.