We are planning on using a TSM570x with Flash EEPROM.
The UserManual lists the following Timing values:
EEPROM Emulation (bank 7) Sector/Bank erase time (bank7)
-40°C to 125°C NOM: 0.08s MAX: 8 s
0°C to 60°C, for first 25 cycles NOM: 30ms MAX: 100 ms
I have a few questions about these values.
1.) It is not clear to me, if these values are per Sector(4k) or per Bank(4k)?
2.) There is quite a significant difference from 30ms/80ms/100ms to 8s. Since we are operating in a very time critical environment, it would be a worst case for us if an erase cycle actually took "a few seconds". Is there any way to get more insight on this?
Best Regards,
Mathias Reinhard