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TMS5703137CGWTQEP GPIO drive capability

Shihab
Expert 1225 points

Hi,

For the GIO of TMS5703137CGWTQEP, Pin N17 (EMIF_NCS0_RTP_DATA15_N2HET2_7), output drive strength is specified as 8mA in Table 3-2 of datasheet.

1. What is the maximum capacitive load it can drive?

2. Is this GIO pin strong enough to drive the complementary PMOS, NMOS pair (Inverting Push-Pull stage) comprised of Si2302CDS (Ciss=320pF) & Si2323CDS (Ciss=1200pF)?

3. Can you explain the characteristics of this GIO drive stage? Is it a voltage source that is current limited?

4. What is the peak safe current that can be drawn from this pin?

5. What is the output resistance of this pin?

Thanks,

Shihab.

  • 0
    TI__Guru 69070 points

    Shihab,

    The best I think we can do is to point you to the IBIS models for the device.  These are available in the ZIP file that you can download here:   http://www.ti.com/adc/docs/midlevel.tsp?contentId=23670

    1 & 2 are not really questions that we can answer yes or no to.  The answer will depend on how fast you need to drive these signals.  I think that you'll find it's too slow for your liking with such large loads but you can decide by simulating this against the models.

    For 3, 5,  what we provide is the abstraction in the IBIS model, you'll find I-V curves for the output in that file.

    For 4, we don't spec this directly as far as I can tell.  But if you were to short a large # of IO to GND and drive them all 'high' I think you would find that you're violating the max junction temp of the device fairly quickly.   Normally the device isn't intended to be used to drive heavy DC loads on many pins.   So just watch your power dissipation when you analyze this scenario.