I am using the TM4C129ENCPDT micro in a battery-powered application. I have set up the Sleep Power Configuration register to use Low Power Mode for the Flash and Standby Mode for the SRAM when in Sleep Mode. The datasheet specifies 5us for restoring Flash to active state and 15us for restoring SRAM to active state. When I measure the time from an external interrupt to wake-up with these settings, I get the following results.
| Sleep Power Configuration | Wake-up Time |
|
Flash: Low Power |
~96us |
| Flash: Active SRAM: Standby |
~18.2us |
| Flash: Low Power SRAM: Active |
~96us |
| Flash: Active SRAM: Active |
~1.11us |
The only measurements here that are close are the SRAM in standby and when they are both set to be active during sleep. The Flash low power wake-up time is about 16 times the specified time.
The marking on the part is as follows:
TM4C129
ENCPDTT3
4BC04QW
