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EEPROM Endurance Details

This question is about the 2KB of EEPROM in a TM4C123xxx part.    According to the datasheet, a 'word' is defined to be 4 bytes.  16 'words' make up a 'block'.  2 'blocks' make up a 'meta-block'.

This sentence from section 1.3.2.4 on EEPROM is confusing me.  "Endurance of 500K writes (when writing at fixed offset in every alternate page in circular fashion) to 15M operations (when cycling through two pages ) per each 2-page block."

1) I think before I can understand what the above sentence means, I need to understand what a page is and what a "2-page block is".

2) For the 500K figure, it says "alternate page in circular fashion".  So assuming a fixed offset of say 3, would you write to block 0, the block 1, up to block 15, and then start back over at block 0?  

3) For the 15M figure, is it writting to block 0, offset 0, then block 0, offset 1, all the way to block 1, offset 15, and then starting back at block 0, offset 0?

Our application needs to be able to write 12 bytes at least 1M times, so any help is greatly appreciated.

Many thanks for the help.

JR

  • You can get an SPI FRAM for < $1.50 in small quantities with 1014 read/write cycle endurance. As a side benefit it's faster and doesn't suffer the errata of the on board memory.

    Robert

  • Hello JR

    Each page is 16 words. A 2 page block is 32 words and matches the sector size of the underlying flash which emulates EEPROM.

    The 15M operations is when the 32 words are written one block (or 2 page). This is achieved when you write Word0-Word31 and then wrap back to Word0. If on the other hand it is Word0 more times that Word1-31 then it shall be lesser than 15M

    Regards
    Amit