Hello,
I have problems with using ECC functionality of Flash Bank 7 (EEPROM bank) in TMS570LC4357 MCU.
I program this flash bank using Flash API F021 library.
I did following tests:
1) write word with ECC - write the same word again with one bit changed 1->0 - READ this word (it should cause 1-bit correctable error)
2) write word without ECC - READ this word (it should cause multiple bits uncorrectable error)
In both cases, read causes ESM nonmaskable interrupt from Group 2 Channel 3 and nERROR output is set to low. Is it correct bahaviour?
According to TMS570LC4357 documentation, only uncorrectable errors should cause nERROR state change. And none of L2FMC errors should be connected with ESM channel 2.3 (http://www.ti.com/lit/ds/spns195a/spns195a.pdf p.136).
I would like to be able to get 2 different notifications when:
1) 1-bit error (correctable) occurs
2) Multiple bits error (uncorrectable) occurs.
Thanks for your help.
