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TMS570LC4357: Async EMIF timing for consecutive reads/writes

Part Number: TMS570LC4357

Team,

A customer of mine is looking for additional information about the EMIF timing. Neither the datasheet nor the TRM are 100% clear. Are there timing diagrams for the following cases?

  • Read-Read-Write (access to 16-bit Memory-Device)
  • Write-Write-Read (access to 16-bit Memory-Device)
  • Read-Read (two 16-bit accesses, resulting from one 32-bit read)
  • Write-Write (two 16-bit accesses, resulting from one 32-bit write)

Does the TA time apply in all of these cases? It is also unclear how CS behaves during a 32-bit access, which is split into two 16-bit accesses.

My customer needs these details as they are interfacing the EMIF to a FPGA.

Thanks,
  Robert

  • Hi Robert,

    I've forwarded your question to QJ as he is the best resource for answering this at this point in time. He should get back with you soon.
  • Hello Robert,

    The turn around (TA) cycles incurred during the following async memory accesses:

     

    Access Transition Needs TA (turn around)

    1

    SDRAM to asynchronous memory

    2

    Asynchronous memory to SDRAM

    3

    Write to write – same nCS

    4

    Read to Write – same nCS

    5

    Write to write – different nCS

    6

    Read to read – different nCS

    7

    Write to Read – different nCS

    8

    Read to Write – different nCS

    The turn around (TA) cycles doesn't incur during the following async memory accesses:

     

    No TA incurs

    1

    Write to write – same nCS

    2

    Read to read – same nCS

  • Hello,

    1. Reading 16-bit data from async memory: channel 3/4 are nDQM0/1; channel 2 is nOE; channel 1 is nCS

    2. Reading 32-bit data from async memory: channel 3/4 are nDQM0/1; channel 2 is nOE; channel 1 is nCS

    The nCS is deactivated between each transition.