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How to test External NOR flash connected to TMS570 by EMIF

RAGESH M R
Prodigy 40 points
Other Parts Discussed in Thread: HALCOGEN, TMS570LC4357

I want to test external DRAM and NOR flash connected to TMS570 by EMIF.

DRAM is working correctly. I wanted to know how to test my NOR flash. I am using HALCOGEN for code generation.

My safety micro is connected to Async1 and its memory is defined as 0x60000000.

First I initialized Async1 by calling  emif_ASYNC1Init();


Then I used following code for writing and reading from NOR flash.

{    
    
       unsigned short *NORF_ptr = ( unsigned short *)0x60000000;
      unsigned short Read_back_data;
      *NORF_ptr = 0x1234;
      Read_back_data = *SRAM_ptr;

}

I am not getting the value 0x1234 in Read_back_data variable. Also checked the memory locations, it shows data like 0000E040

So I would like to know whether my testing method is correct or not.

If the testing method is correct then it may be the configuration issue.

  • 0
    TI__Guru**** 196306 points

    Hello Ragesh,

    You can not write the data directly to the NOR flash address. You need to follow the read/write sequence defined in NOR flash datasheet.

    For example: S29GL01 NOR flash

    To write a word (Word Program) to NOR flash, you need to:

    1. write AA to 0x555

    2. write 55 to 0x2AA

    3. write A0 to 0x555

    4. Then write your data (PD) to the specified address (PA)

  • 0 in reply to QJ Wang
    Prodigy 40 points

    Hi Wang,

    Thank you very much for the support.

    I am using S29GL128S10DHB010 as external flash.

    I used the following code to write a single word in a flash memory location

    void program_word()
    {
        uint16_t *base_addr = (uint16_t *)0x60000000;
        uint16_t *pa = (uint16_t *)0x60000100;
        uint16_t data = 0x1234;
        
      *( (uint16_t *)base_addr + 0x555 ) = 0x00AA;   /* write unlock cycle 1            */
      *( (uint16_t *)base_addr + 0x2AA ) = 0x0055;   /* write unlock cycle 2            */
      *( (uint16_t *)base_addr + 0x555 ) = 0x00A0;   /* write program setup command     */
      *( (uint16_t *)pa )                = data;     /* write data to be programmed     */

    }

    When I look in to the memory location 0x60000100 , it shows different values, most time it shows 0x000e0000.

    I am using TMS570LC4357 as MCU, and the EMIF async memory  is defined in 0x60000000, so I used the base address as 0x60000000, this memory is also defined in linker file.

    Is my understanding and above test code is correct ?

    Thanks and Regards,

    Ragesh M R

  • 0 in reply to QJ Wang
    Prodigy 40 points

    Hi Wang,

    I have tried the sequence, but it is not working.

    Please give any suggestion to test it, I am not able to probe the signal in the board since it is multi layered.

    Thanks and Regards,

    Ragesh M R

  • 0 in reply to QJ Wang
    Prodigy 40 points
    I have followed the sequence, still it is not working
  • 0 in reply to RAGESH M R
    TI__Guru**** 196306 points
    Can you try this:

    *( (uint16_t *)base_addr + 0xAAA ) = 0x00AA; /* write unlock cycle 1 */
    *( (uint16_t *)base_addr + 0x554 ) = 0x0055; /* write unlock cycle 2 */
    *( (uint16_t *)base_addr + 0xAAA) = 0x00A0; /* write program setup command */
    *( (uint16_t *)pa ) = data; /* write data to be programmed */
  • 0 in reply to QJ Wang
    TI__Guru**** 196306 points
    Hello Ragesh,

    I assume that you have solved the problem with the NOR flash read/write.