I'm evaluating the TMS570LS3137 and it's use in a safety critical application. Specifically I'm looking at the datapaths in the design to evaluate the risk of undetected erroneous data or loss of availability.
is the intended operation to run out of flash or to have the program load from flash and then run out of SRAM? Also does each processor have the option for independent data paths to both flash and SRAM? figure 1-1 depicts a single path while figure 6-10 depicts what looks like a true redundant data path to separate RAM banks for each processor. Is there an application note that explains what aspects the lockstep function protects from?
Also is there any fast nuetron test data for the device? The best I could find is here:
I am interested in the actual test procedure that was used and how rate was determined. There is a chance I will be testing this device in a fast neutron facility so if there is any pre-canned test software available I would be very interested in that. I'll be looking to measure flash, SRAM, flop rates and SEL.