Hi,
I am choosing a Parallel NOR flash which will be interfaced to TMS570's EMIF. Currently I am doing AC analysis between EMIF and Flash device. And, I was referring Section 21.4.2.2.1 of SPNU563A.
I have following questions,
1. In Table 21-42 it is mentioned that tD (Output delay time, EMIF_CLK high to output signal valid) is mentioned as 7ns (Max). However, this data is not present in "ASYNCHRONOUS Memory Characteristics" of TMS570LC4357-EP datasheet. Is it safe to assume that it will 7ns? Because "SYNCHRONOUS Memory Characteristics" table contains same value.
2. section 21.4.2.2.1 of SPNU563A is talking about interfacing TMS570 to "LH28F800BJE-PTTL90" Flash. According to Table 21-42, tH (Data hold time, read EMIF_D after EMIF_CLK high) is 1nS. That means, flash device must hold the D[15:0] pins to valid state at least for 1ns once D[15:0] is sampled at rising edge of EMIF Clock. However, LH28F800BJE-PTTL90 datasheet says that, it's data-hold time is 0 ns. (Table 6.2.4, I have given the snapshot at the end)
My question is:
Since tD's max value 7ns; That means, tD can have any value between 0ns to 7ns; In that case, there may be a probability that tD can be 0 ns for some read operation. If this happens, nOE de-activates along with rising edge of EMIF clock; At this particular instance Flash device will not be able to meet the hold-time requirement of EMIF, as flash will de-activate the D[15:0] along with nOE.
Is my understanding correct? (Sorry for the little complicated/tangled question).
---- Flash device Timing Parameters -----