Flash memory and erase segment

I'm working with MSP430F2618 and IAR IDE.I've created the parameter on flash memory by compiler word const,for e.g.: const uint8 my_array[30];

In memory view,i saw that the parameter was located on address 0x33f6.After activating write_fl(),i saw that the erased segment was started on 0x3200 and ended on 0x33ff .As you could see,i couldn't update all my_array(30 cells) with the value ,the reset procedure was activated on my target.

My question is why the erased segment was not started from 0x33f6 ?

write_fl(my_array,30,1); ///function calling

void write_fl(char* flashMemory,uint16 lengthValue,char  value) //function prototype
{
  char *Flash_ptr;                          // Flash pointer
  unsigned int i;
  uint16  dataFlashSize = lengthValue;
 
  Flash_ptr = flashMemory;   // Initialize Flash pointer
  FCTL3 = FWKEY;                            // Clear Lock bit
  FCTL1 = FWKEY + ERASE;                    // Set Erase bit
  *Flash_ptr = 0;                           // Dummy write to erase Flash seg

  FCTL1 = FWKEY + WRT;                      // Set WRT bit for write operation

  for (i = 0; i < dataFlashSize; i++)
  {
    *Flash_ptr++ = value;                // Write value to flash
  }

  FCTL1 = FWKEY;                            // Clear WRT bit
  FCTL3 = FWKEY + LOCK;                     // Set LOCK bit
}