I heared that sometimes NOR flash could suffer from Gate disturb, that is, while programming a bit, the adjacent bit could also be programmed unexpectedly.
Up till now, I haven't seen this in G2744. But is there such a possibility?
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I heared that sometimes NOR flash could suffer from Gate disturb, that is, while programming a bit, the adjacent bit could also be programmed unexpectedly.
Up till now, I haven't seen this in G2744. But is there such a possibility?
The flash in microcontrollers is designed with large cells so that it is robust enough even without ECC or other error correction mechanisms.
And Understanding MSP430 Flash Data Retention (SLAA392) says:
Write Disturb
During the program operation, high fields are placed not only on the bit being programmed, but on other bits along the same word line and/or bit line. If there are defects in the dielectrics or in the substrate, leakage paths can be created, so inadvertent programming of a non-selected bit can be observed. To address this defect mechanism, high-voltage screens are in place in the test program to eliminate such units from the population.
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