MSP430FR6989: FRAM - write cycles.

user6390582

In Flash memory wear-leveling technique is used to minimlize erase cycles. I want to minimalize erase cycles using FRAM. My idea is to write data to consecutive cells as long as there are any. In case i filled entire memory, i start from the beginning. Is that a good idea or i have to implement something else?

over 5 years ago

0 James Evans over 5 years ago

TI__Mastermind 49692 points

Hello,

FRAM is inherently different from flash in that the total endurance is impacted by read cycles as well. However, the Flash memory on MSP430 flash-based devices has a typical write endurance of 10^5 write or erase cycles. In comparison, the endurance of a single FRAM cell in the MSP430FRxx family is 10^15 write or erase cycles.

MSP430FR2355: FRAM write cycle durability and ECC

Regards,

James

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MSP430FR6989: FRAM - write cycles.