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DRV8353RS-EVM: Gate Driver is damaging above 20 volt supply

Deepak Prajapati
Prodigy 30 points
Part Number: DRV8353RS-EVM
Other Parts Discussed in Thread: CSD19535KCS

Hi

I am using DRV8353RS Gate Driver in my controller for BLDC Motor for E-Rickshaw.

It is meant to operate at 48V.

Here is the schematic of Gate driver connections

When I increases VIN=VM=VDRAIN more than 20volts motors stops working and gate driver fault pin(pin 28) is pulled logic 0 and gate gate driver starts heating very fast i.e., it is damaged.

When I tried with some other board same problem is coming.

I connected gate driver as mentioned in its datasheet.

Also checked with SPI communication after detaching power board(i.e., MOSFET Inverter to whom gate driver is switching) and Read the fault register 1 it is showing 10bit high which means fault is present and the read the fault register 2 it's 6 bit is high indicating VCP and VGLS is not building.

When I checked(C4<7 volts and C1<7 volts but C6 >5 volts) it was lower than the threshold value.

VIN=VM=VDRAIN are rated for more than 90volts so 48 volts should be fine to apply.

Also all logic circuit are supplied from buck converter of gate driver (configured at 10v) in cascade with an LDO 3.3volt.

Here I am attaching my microcontroller schematics also for your reference.

I am not able to detect the problem please help me.

Also Mosfet are rated as

  • 0
    TI__Mastermind 21805 points

    Hi Deepak,

    Can you confirm your register settings for this device? Especially IDRIVE settings? High IDRIVE tends to result in oscillations and ringing. If you decrease the IDRIVE setting, does the system function?

    I do not see your schematic for the 1/2-H bridges, is it something you can share? Also can you share your MOSFET part number?

    Thanks,

    Matt

  • 0 in reply to Matt Hein
    Prodigy 30 points

    Hi Matt

    Thanks for your reply.

    MOSFET part no. CSD19535KCS 100 V N-Channel NexFET™ Power MOSFET and I am using 2 Mosfets in parallel to increase the current capacity.

    Register settings for this device are defaults except fault status register which reads as fault register 1 it is showing 10bit high which means fault is present and the read the fault register 2 it's 6 bit is high indicating VCP and VGLS is not building.

    IDRIVEP_HS = 1111b = 1000 mA

    IDRIVEN_HS = 1111b = 2000 mA

    IDRIVEP_LS =  1111b = 1000 mA

    IDRIVEN_LS =  1111b = 2000 mA

    Can you tell me for this kind of application and inverter connection what should be the register setting for Gate Drive HS Register and Gate Drive LS Register.

    Here is the schematics which you asked for.

    Thanks

  • 0 in reply to Deepak Prajapati
    TI__Mastermind 21805 points

    Hi Deepak,

     2x CSD19535KCS has a QGD of 13nC x 2 = 26 nC, which would mean a gate drive setting of 1A corresponds to a rise time of 26 ns. This is way too fast and will end up causing significant oscillation & ringing.

    Please read this FAQ: Selecting the Best IDRIVE setting and Why this is Essential

    I would recommend starting at the lowest IDRIVE setting.

    Thanks,

    Matt