LM5060: Short protection solution delection

Hardy Xue

Part Number: LM5060
Other Parts Discussed in Thread: LM5069

Hi Team,

My customer has MOSFET burn out issue when short condition. The circuit is as below.

Their application is 48V/40A.

When they short Vout to GND, the current will up to 120A in 200us. This high current cause Q1 P-MOS damaged.

The efuse solution look like suitable to customer for short protection. But I found other thread say that LM5060 without short protection.

1. Could you provide best solution for short protection?

2. Why our efuse solution usually use N-MOS? Do we have P-MOS application efuse?

Best regards,

Hardy

0 Rakesh over 4 years ago

Hi Hardy,

Thanks for reaching out!

N-MOS based solutions are efficient because of low Ron of NMOS when compared to same size P-MOS FET.

What is the application use case and EE ?

Do they need Q100 device ? If not, please look at LM5069 for hot-swap.

For ideal diode solution, please look at LM74800

Best Regards, Rakesh

0 Hardy Xue over 4 years ago in reply to Rakesh

Hi Rakesh,

This is Robot application.

Customer just would like to have a solution to avoid P-MOS damaged when short condition.

1. Do we have more easy solution? LM5069 is a powerful solution but customer don't need UVLO, OVLO or PG function.

2. Could LM5069 use P-MOS for external switch? If no, could you suggest N-MOS solution also?

Best regards,

Hardy

0 Rakesh over 4 years ago in reply to Hardy Xue

Hi Hardy,

LM5069 can only drive N-MOS. Please suggest customer to use design calculator "LM5069 Design Calculator With FET Recommendation" which suggest suitable MOSFETs.

We do not have simpler solution than LM5069 for this current level.

Best Regards, Rakesh

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