Hello TI team,
we are trying to use BQ40Z80 based BMS with BUK9Y1R3-40HX MOSFETs for short-circuit protection.
There is a problem with the delay time. The delay times SCD1 and SCD2 are set to 0 microseconds but the actual delay time is several hundred microseconds.
The following graph shows how the DSG voltage (blue line) drops after increasing the SRN-SRP voltage (yellow line).
As it is seen from the graph, the DSG voltage doesn't even try to change within around 100 microseconds after the SRN-SRP voltage rises. After that, the DSG voltage doesn't drops sharply but decreases slowly because of gate-source capacity of the MOSFET. I see two problems here:
1. Is there a way to reduce the time from SRN-SRP voltage threshold to the DSG voltage switching off?
2. Which MOSFET driver do you recommend to use to force the discharge of the gate-source capacity?
The delay time is very important for us because too much delay time causes the MOSFETs to burn out.
