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LMG1210: Inquiry about features

David Kim2
Genius 3385 points
Part Number: LMG1210
Other Parts Discussed in Thread: LMG3100R017

Hi

I would like to design with the following specifications.

1. Gate Driver: LMG1210

2. GaN MOSFET: EPC2071 https://epc-co.com/epc/products/gan-fets-and-ics/epc2071

3.Motor Spec

 - Motor speed: 2000 rpm (133.33 Hz)

- Motor rated current: 12 [Arms]

- Motor maximum current: 24 to 36 [Arms]

- PWM Switching Freq : 50 [kHz]

- Input voltage: 24-100 [Vdc]

4. Questions (Refer to the attached SCH)

 1) Is there a problem driving GaN FET (EPC2071) with the Gate Driver IC (LMG1210)?

2)And if I apply LMG3100R017 instead of EPC2071, will I not have to use LMG1210? Please let me know if it is possible to replace it

3)Can I run 2 GaN MOSFETs in parallel with the LMG1210?

4)Is there a reason why the source and sink current are different?

ThanksSIXPACK_LSmecapion.PPTX

  • 0
    TI__Genius 14145 points

    Hey David,

    Thank you for your question regarding the LMG1210.

    1. The LMG1210 is well suited for this application and driving the EPC2071.

    2. I am not the LMG3100R017 expert, you would need create a thread regarding it to reach out to the HVP-GaN team regarding that product in this application.

    3. The LMG1210 can drive two FETs in parallel. With a GaN application, layout is critical and so these will need to be placed as close as possible to the driver. When driving GaN FETs in parallel, drivers perform better than the integrated FET driver counterparts.

    4. The difference in source and sink current was done to target soft switching due to this product not having split outputs.

    Let me know if there are any further questions.

    Thank you,

    William Moore