Tool/software:
Dear TI,
I am not sure is this is allowed to use NMOS RDSon as the shunt resistor?
If this is possible what filtering RC should be used?
Bests,
Brian
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Tool/software:
Dear TI,
I am not sure is this is allowed to use NMOS RDSon as the shunt resistor?
If this is possible what filtering RC should be used?
Bests,
Brian
Hello,
A regular resistor was always used. Not sure with NMOS Rds/on.
Regards
Mahmoud,
What is the major different on current sensing perspective between Rshunt and Mosfet Rds(on)?
Can LM25119 support such replacement?
Bests
Using FET Rds/on, there is few 100pF parasitic capacitance in parallel to the On resistance. The impedance is Ron/(1 + Cp*Ron*S). The time constant is Cp*Ron and it is very small. By theory should be similar to a shunt resistor.
Regards
Mahmoud,
1) May I ask what does "S" stand for?
2) Okay then the only missing puzzle is that the CS pin is able to handle such switching voltage range.
I might be wrong but the Absolute Maximum Ratings CS1, CS2 is only 0.3V.
So if voltage divider is used to split the switching node to a point that is within such range is this still valid to do so?
Bests
the "S" is Laplace variable.
that is right the abs max on CS1 and CS2 is only 0.3V.
Regards
Well I guess this is dead end.
The sensing cycle is during bottom FET turned on and the high voltage is appeared at off cycle and the sensing pin itself is unable to handle such voltage.
Thank you for analysis.