Tool/software:
Hi team,
My customer is using TPS12111-Q1 to limit the inrush current and curious about the precharge function.
They use 2 MOSFETs connected in parallel. In their application, when the voltage of the load capacitor is above 4V, MCU will be waked up and then the capacitor's voltage will be pulled low, which may lead to a larger current over precharge MOSFET.
Since the current capacity of precharge FET is smaller than main FETs. Under this condition, will it be better to add Rg and Cg to the main FETs instead of using precharge FET?
Thanks.
BR,
Grey
