Tool/software:
Hi,
Based on schematics review from TI C736 is set to 33nF and R495 is set to 100 ohm for Inrush of 200mA.
But with these resistor, capacitor value, the delay between Vin to Vout is ~5.8ms based on TINA simulation.
But based on our design requirement, this delay needs to be lesser than 3ms.
How can we achieve the same?
Our MOSFETs are BSC026N08NS5
