Because of the Thanksgiving holiday in the U.S., TI E2E™ design support forum responses may be delayed from November 25 through December 2. Thank you for your patience.

  • State TI Thinks Resolved
  • Replies 7 replies
  • Answers 2 answers
  • Subscribers 65 subscribers
  • Views 162 views
  • Users 0 members are here
Support feedback
Options
Options
Similar topics

TPSI3050-Q1: what maximum current can i drive using above switch driver

Bala
Prodigy 120 points
Part Number: TPSI3050-Q1
Other Parts Discussed in Thread: TPSI3100-Q1, TPSI3052-Q1

Tool/software:

Hi Team, I am trying to use above switch to drive 100A at 12 V load. Can this switch driver can be used.


Are there any limitations in using this switch driver.

  • 0
    TI__Prodigy 360 points

    Hello Bala,

    Thank you for reaching out regarding this TPSI3050-Q1 question on load drive capability.

    The team is looking into this and will circle back in 24hr.

    Thank you.

    Best,

    Hussain

  • 0 in reply to Hussain Alsahhaf
    TI__Prodigy 360 points

    Hello Bala,

    TPSI3050-Q1 is an isolated gate driver that will be driving an external FET. Therefore, the external FET will need to be able to drive the 100A, 12V load of interest. 

    The specs of interest for our isolated gate driver would be the maximum power transfer available and maximum gate drive voltage available. TPSI3050-Q1 offers 10V gate drive, but if a higher gate drive voltage is needed, we also offer a 17V isolated gate driver TPSI3100-Q1 and 15V gate driver TPSI3052-Q1.    

    To find a compatible FET to work with TPSI3050-Q1, please feel free to utilize this useful TPSI3050-Q1 Calculator on ti.com to achieve your system requirements.

    Thank you and let us know if further questions arise.

    Best,

    Hussain  

  • 0 in reply to Hussain Alsahhaf
    Prodigy 120 points

    Hello Team, we have selected IPTG039N15NM5 MOSFET, can you check its feasibility to be driven by TPSI3050-Q1.

    Can you share basic circuitry if possible.

    LOAD Driven is R, L, C which can carry 200A for few micro seconds and 100V for few micro seconds

  • 0 in reply to Bala
    TI__Prodigy 360 points

    Hello Bala,

    Thank you for reaching out and providing further information on the selected FET (IPTG039N15NM5).

    The team is looking into this and will circle back in 24hr.

    Thank you.

    Best,

    Hussain

  • 0 in reply to Hussain Alsahhaf
    TI__Prodigy 360 points

    Hello Bala,

    May you please confirm if these two requirements are related to the same system/socket: 

    • Drive 100A at 12 V load
    • Carry 200A at 100V for few microseconds
      • To clarify, are we expecting a "few microseconds" to be in the range of 1us-10us or >10us?
      • The Safe Operating Area (SOA) curve on the IPTG039N15NM5 datasheet indicates the following acceptable ID currents at VDS=100V for pulse durations of 1us-10us and >10us:

    More clarification on the expected pulse duration will help narrow down the acceptable ID currents at the system's maximum load voltage (100V in this case based on previous response).

    Please feel free to refer to this FAQ (link) on MOSFET selection with TPSI3050-Q1 as the team investigates further.

    Thank you and anticipating your input.

    Best,

    Hussain  

  • 0 in reply to Hussain Alsahhaf
    Prodigy 120 points

    Hello Hussain,

    We are using external power supplies from Delta Electronics, but as we have R, L, C loads current can range up to 200A for few microseconds, inversely for voltage as well it can range up to 100V during switching.

    we are using IPTC011N08NM5ATMA1 in common mode, driven from TPSI3050-Q1. 

    Can you confirm same for above MOSFET.

    As well what is the isolation from common source of MOSFET's to VSSS, VDDM, VDDH, as we are using MOSFET's to drive loads above mentioned.

    Thank you for responding.

  • 0 in reply to Bala
    TI__Prodigy 360 points

    Hello Bala,

    Similar to the analysis done for IPTG039N15NM5, observing IPTC011N08NM5ATMA1 MOSFET SOA curve, we see the following range of acceptable ID currents at VDS=100V for pulse durations of 1us-10us and >10us:

    For a TPSI3050-Q1 VDRV close to 10V (voltage of MOSFET gate relative to VSSS in common source configuration), we expect a small Vds across the MOSFET with Id=200A (Vds=Id*Ron): 

    It should be feasible to drive both MOSFETs mentioned above with TPSI3050-Q1.  

    As for VSSS, VDDM and VDDH voltages, VDDM and VDDH are nominally floated 5V and 10V above VSSS respectively. All of these pins are on the secondary side of the device isolated from the primary side pins (EN, PXFR, VDDP, VSSP).

    Thank you.

    Best,

    Hussain