Other Parts Discussed in Thread: CSD16407Q5, CSD17308Q3
HI,
Currently designing a 50A output product using the Bq40z60, considering space and cost issues,
Adopted the CHG & DSG FET independent path design (please refer to the attached circuit)
When the discharge protection test was performed, the DSG FET could not be completely cut off quickly, causing the MOS FET to burn out.
Analysis of the DSG FET Gate waveform and found that VGS still has residual voltage (about 1.7V) after the truncation. This is enough for the MOS FET to turn on again (please refer to the following waveform)
My suspicion is that the Bq40z60 has special requirements for the selection of DSG MOS, or that the current of Sink low is too small.
Do you have a design proposal for CHG & DSG FET independent paths or a better way to solve the problem of truncating DSG FETs? (If there is an external driver solution is better)
Janson