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As per the datasheet Rds(on)max=3.6mOHM with test condition like Id=100Amp.
If i allow to flow Id=100Amp continuous from MOSFET with Rds(on)max=3.6mOHM then i would have to dissipate Pd=36W(Pd=Id^2 * Rds(on)).
Now if i calculate Tj(Junction Temperature) without heat sink for above condition.
Tj=(Pd * Rtheta(ja)) + Ta,
=(36W * 62deg C/W) + 25deg C,
=2257deg C,
So without heat sink i can not even dissipate Pd=36W of power from MOSFET because, Tj would be out of specs.
I would like to know how TI has managed Tj within safe limits?
What different techniques is followed while testing this product?
Hi Abhi,
Thanks for the inquiry. Rds(on) specified in the datasheet is tested using a single pulse. The pulse is very short to minimize self-heating of the device. This is an industry standard test method used by all power MOSFET vendors. Please refer to the MOSFET blog series below. There is very good information on continuous and pulsed current ratings and on thermal impedance. Here is a link to the blog series: .