Hello,
in our application we use the LMG1205 for driving a halfbridge consisting of two EPC2053 GaN-FETs.
Our minimum switching frequency is 20kHz and the maximum duty cycle is nearly 100% (motor drive application).
In the datasheet of the FET a maximum Gate to Source leakage current of 9mA (!) is given.
This has a major impact in calculating the necessary bootstrap capacitance!
Why is the Gate to Source leakage not considered in your formula in the datasheet (chapter 8.2.2.2)?
With your formula i get a value of about:
Qg,max = 14.8nC
IHB = 0.12mA
tON = 45µs (90% duty cycle)
Qrr = 4nC
dV = 0.2V
CBST > (14.8nC+0.12mA*45µs+4nC)/0,2V = 121nF
When putting the GS leakage current of 9mA into account the value is significantly higher!
CBST > (14.8nC+9.12mA*45µs+4nC)/0,2V = 2.146µF
Is it possible to update your formular to avoid false calculation?
--> normal silicon MOSFETs has much lower values of GS leakage, therefore the effect is only present when using GaN FETs.
Best regards
Thomas