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Hi user6261364,
The power dissipation for any LDO is (VIN-VOUT)*ILOAD. For example, if VIN is 5V, and VOUT is 3.3V and ILOAD is 100mA, then the power dissipated is (5-3.3)*0.1 or 170mW.
At TI we refer to the JEDEC standard for thermal performance. The results for a JEDEC High-K board are shown below:
To use this information, RJA is used to predict the potential thermal rise above the PCB ambient. So for the above example, depending on the package used. the die junction temperature would be RJA*0.17W. Assuming the X2SON package this would be 216.1*0.17 or a 36.7C degree rise above the PCB ambient temperature. Meaning if the operating temperature of the PCB is 40C, then the die temperature would be ~76.7C.
the second parameter circled above PSIJT can be used to verify the temperature rise in the application.
A good reference for thermal performance of any LDO can be found here.
I hope this helps.
