I would like to know how to translate the timings specified in a NAND part datasheet into nanosecond perios of turn-around, write- setup, strobe, hold and read- setup, strobe, hold.
I've looked at the patch submitted by Sekhar Nori, where the timings were calculated by Mukul Bhatnagar but I have yet to figure out the map from the Micron MT29 datasheet timings of:
ALE to data start, ALE hold time, ALE setup time, CE# hold time, CLE hold time, CLE setup time, CE# setup time, Data hold time, Data setup time, WRITE cycle time, WE# pulse width HIGH, WE# pulse width, WP# transition to WE# LOW, ALE to RE# delay, CLE to RE# delay, Output High-Z to RE# LOW, READ cycle time, RE# HIGH hold time, RE# pulse width, Ready to RE# LOW and WE# HIGH to RE# LOW
to the EMIFA strobe-mode
write-setup, write-strobe, write-hold, read-setup, read-strobe, read-hold, turn-around.
Can anyone provide some hints or a procedure to follow?
