I'm working on meeting the noise requirements of the VDDS_SRAM_MPU and VDDS_SRAM_CORE_BG (50mV p-p) on a 1.8V I/O design. The data sheet states that VDDSSHV can be combined with rail 1 and all be brought up simultaneously when they are the same voltage. Is it possible to instead split them up into the following two groups? And if so which set if either is required to come up first?
VDDS_SRAM_CORE_BG, VDDS_SRAM_MPU, VDDSOSC = 1.8V - low current low switching noise
VDDS, VDDSHV = 1.8V - high current high switching noise
-
Ask a related question
What is a related question?A related question is a question created from another question. When the related question is created, it will be automatically linked to the original question.
