a.
p1-2: Since each CS has 64MB, why cannot NOR flash support 64MB? Instead, it supports 16MB.
Explanation: due to the address line for EMIF which are 24 address lines, hence it can only address up to 16M of location. Each location has 2 bytes. Hence the c66 datasheet is also wrong in saying that it supports 16MB. It should be 16M of location or 32MB.
b.
Since each CS can support up to 16M of location of NOR flash, then the whole device should support up to 16*4=64M of location or 128MB of NOR flash.
Explanation: Only CS4 or CE2 can be used for NOR flash. p25 of c66 datasheet.
c.
p2-5: What is the meaning of address selects in "EMIF[23:22] behave as address selects"? Why for 16bits, EMIFA23 maps to A0 and for 8bits, EMIF23 and 22 map to A1 and A0?
Explanation: ?
d.
p2-5: Is EMIFRnW being used in NOR flash? It is not on the block diagram in p2-4 and p2-5?
Explanation: ?
e.
p2-8: Is EMIFRnW an active high or active low signal? If active high, them the statement "EMIFRnW becomes active (LOW)" should be changed to "becomes inactive".
f.
There seems to be something wrong with the Read and Write diagram Fig2-4 to 2-9. Fig 2-6 and 2-7 is for Select Strobe mode whereas Fig 2-8 and 2-9 is for WE mode. Fig 2-4 and 2-5 is for which mode? Fig2-4 the EMIFBE# is always low, is that correct? Fig2-6, the EMIFBE# seems weird. Fig2-8, the EMIFBE seems weird.
g.
Why is that 2 modes - WE and SS? Is it due to different read and write timing diagram of different nor flash memory device? At any one time, the C66 needs to be in in any of the 2 modes? Can it be neither of the 2 modes?