Other Parts Discussed in Thread: TDA4VM,
We tested DDR DQ write eye Diagram failed (as shown in Figure 1 below) on the board of TDA4VM with Micron MT53E512M32D1ZW-046 AUT:B in D (short name ) project. Comparing the fine eye map of the previous L project which TDA4VM with MT53E1G32D2FW-046 AAT:A (as shown in Figure 2 below), I find that the main cause is that the center point of DQS is not in the middle of the eye of DQ write. The D project SPRACU8B_Jacinto7_DDRSS_RegConfigTool value olso checked OK by Micron FAE.
Our other project H, also had the same problem.The H project is TDA4VM with MT53E1G32D2FW-046 AAT:B
Today, I change the MT53E1G32D2FW-046 AAT:A to the D project board ,use the same D project software test the DDR DQ write eye Diagram is passed(as shown in Figure 3 below), so I confused, same software,same PCB,different LPDDR4 part number,only with MT53E1G32D2FW-046 AAT:A DDR can pass the DDR DQ write eye Diagram.
please help improve DDR DQ write eye Diagram on the D project ,which is TDA4VM with Micron MT53E512M32D1ZW-046 AUT:B
When we tested the eye Diagram, we turned off the DQ training function as recommended by E2E to prevent thin lines from passing through the middle of the eye. Here is a link to how to turn off DQ training.TDA4VM-Q1: TDA4VM-Q1 - Processors forum - Processors - TI E2E support forums









