Other Parts Discussed in Thread: TMS320DM8168
Hi,
I am working on a project in which I am using DDR3 Interface. I actually studied Gerber for EVM816x_Gerber_RevE. I have few queries regarding it as listed below.
- AT length for clock in DDR3 is > 100 mils. Whereas in datasheet for tms320dm8168.pdf it is defined to be within 100mils with a skew of 100mils. (what should be the length?)
- A1+A2 length is greater than 3000 mils. Whereas it is defined to be within 2500 mils with a skew of 25 mils(what is maximum allowable length?) (Page no. 201 in tms320dm8168.pdf )
- Is there any relation between DQS and CLOCK signal for DDR3 as in case of DDR2?
- You have defined range for CK and ADDR_CTRL group within CACLM-50 TO CACLM+50. Does that mean I can have clock and ADDR_CTRL signal should be within this range without having relation between ADDR_CTRL to CK.(I mean if CACLM is 2500 mils so I can set length for ADDR_CTRL and clock signal within the range of 2450 to 2550.)
- Single ended trace impedance should be 50 ohm. What tolerance value is excepted.?
- Differential Trace impedance should be 100 ohm. What tolerance value is excepted.?
- Width for DDR3 signal you have defined is 4 mils. We normally set that value to 5 mils is it ok?
- What should be the stackup for six layer board?
- Values for placement of DDR3 should be as per Defined in Datasheet? How these values for x1, x2 and y1 are decided? (given in tms320dm8168.pdf )
- Is there any relation between DDR0 and DDR1 in terms of trace length for ADDR_CTRL, CK,DQs,DQ.?
- Need information regarding placement of decoupling capacitors to stabilize Power plane.
Regards,
Kirti Makwana