Part Number: DRA829J-Q1
Other Parts Discussed in Thread: DRA829J
Hello TI E2E support team,
Our application uses the DRA829J. Does the DRA829J use internal current sources or real ohmic resistors for its internal pull-downs?
We want to assure valid logic levels for the DRA829J.For example, our application connects the buffer 74LVC541A to the DRA829J.During normal operation the buffer 74LVC541A is high-impedant and the DRA829J has its internal Pull-Down (max. 30kOhm) activated. When calculating the maximum possible voltage level at this pin, which of the following approaches has to be used:
- "The leakage current of the high-impedant buffer times the 30kOhm" or"
- The leakage current of the high-impedant buffer plus the 10µA of the DRA829J-Pin times the 30kOhm"
The latter approach would always lead to a minimum 10µA*30kOhm=0.3V at the Pin of the DRA829J. (Possibly worsened by e.g. our buffer)
The decision which approach to use should depend on the internal structure (either current sources or real ohmic resistors)?
Best Regards,
Manoj.
