Part Number: TDA4VH-Q1
Other Parts Discussed in Thread: TDA4VH
Hi TI Experts,
Customer has SOP TDA4VH with Micron: MT53E1G32D2FW for some time with no problems. Due to some reasons, they have to change it to Rayson: RS1G32LO4D2BDS (Micron Wafers). We have told customer they will require spend time & efforts to test & adapt the new DDR by themselves making a number of new boards with pressure test, and customer will do that.
In the meanwhile, before customer starts the adaption works, they have summarized an Excel sheet screenshot below with detailed comparison between Micron & Rayson by extracting the key specs from the datasheet. Customer has done most of the analyzing works, and they found the most challenge & difference between these two DDR come from the timing parameters below, especially tPW_RESET & tFAW. The following timing values are the one customer used with Micron with no problems, and based on the difference in Rayson described below, we may need modify some of the values correspondingly, could you help comment on below two points please?
- Do you see any obvious effects/challenge for these timing parameter difference?
- Any suggested new timing values input especially for tPW_RESET & tFAW? (customer will make the board to pressure test)
I have also shared the datasheet to you privately through email, please have a look.
Thanks,
Kevin
