We are implementing a DDR3 system for a DM816X that uses more routing layers than only TOP and BOTTOM. We have decided on a system Zo of 60 ohms which we control (not counting manufacturing tolerances) to within 2 ohms on all layers, which is permitted according to Table 8-18 No. 13. The PCI-e and SATA sub-systems require 60 ohm SE / 100 ohm differential, and the EVK seems to use something similar for all the DDR3 clocks and strobes, so it would seem logical to use the same. In practice, 100 ohms differential is somewhat difficult to maintain in all the layers, so it would be helpful to know concrete MIN TYP and MAX values for the differential impedance (keeping in mind that we will always maintain 60 ohm SE). I do not see this information specified anywhere in the datasheet or the TRM.
SPRS614B (FEBRUARY 2012) has two empty boxes:
Table 8-24 No. 16
Table 8-10 No. 10
Both of which refer to a note: CK/DQS spacing set to ensure proper differential impedance. Again, I have not been able to find this impedance specified anywhere in the document.
It would be good to know what the proper differential impedance is. I have seen the documentation of other similar microprocessors a requirement of 75-95 ohm differential, this leads me to believe that it isn't terribly critical (assuming that the single-ended requirements are met), but I would like some confirmation on this .
A related question, or request for confirmation: The clock termination resistors (Rcp) and address termination resistors (Rtt) must be 60 ohm to comply with 8-24 Nos. 21 and 22, correct?