Measurements indicate that the OMAP3530 internal Pull-Down (PD) strength is far from the TI stated values in Datasheet rev F.
What is the maximum PU/PD strength to be taken into account for OMAP CBB package, please?
This is required for designing, with correct margins, external PU / PD with opposite pull at start with OMAP3530 device variations.
Measurements on GPIO162 (pin W21) is LL7. - Should have 100 uA PU/PD:
Measured PD = 3.85k (0.5V) with a PU = 10K and PD = 4.3K (0.86V) with a PU = 4K7.
This gives a PD strength of 467 uA - almost 5 times greater than 100 uA.
OMAP GPIO PU/PD strengths are defined as 100 uA or 1mA on some designated pins - which is equivalent to 18K and 1K8.
Datasheet SPRS507F (Rev F):
"The pull-up/pull-down drive strength is equal to 100 uA except for CBB balls P27, P26, R27, and R25 and CUS balls N22, N21, N20, and P24, which the pull- down drive strength is equal to 1.8 K."
On some pins Note (4): "The PU nominal drive strength of this IO cell is equal to 25 uA @ 1.8 V and 41.6 uA @ 3.0 V. The PD nominal drive strength of this IO cell is equal to 1 mA @ 1.8 V and 1.66 mA @ 3.0 V."