All-
We are testing DDR3 mem on a custom 6678 board based on the EVM 6678 design. One change is the DDR3 devices, which are Micron MT41K256M16, but the circuit and layout still closely follow the EVM. The only significant differences are:
-15 address bits connected instead of 13
-two (2) chip selects connected to each device instead of one
We are using 67 MHz input and 667 MHz output DDR3 clocks, so we have left timings in the EVM6678L.gel file as-is. We have set
IBANK_POS = 0
IBANK = 3
PAGESIZE = 3
EBANK = 0
If we do a Fill Memory with a 32-bit unsigned constant, we see this:
12345678 1234xxx 12345678 1234xxx
where xxxx indicates intermittent, inconsistent data (tends to be zero, but not always).
Questions:
1) With device placement sequence in the layout the same as the EVM, in the above data pattern, would DQ[63:48] (4th device) be the one not working?
2) If this should be a timing problem, is there a systematic way to adjust leveling and DDR3 device settings in order to "bracket" the issue?
Thanks.
-Jeff
Signalogic