Hi,
I'm starting from scratch to learn about NAND technology and how to use it with the DM365 (generic). I have seen that there is no strong definition how to use the bytes of a page: ECC Algorithm, User Data (for bad block marking, wear-leveling, etc), and the position of the spare bytes (after every data block or at blocked at the end of the page) can be chosen by the application? But what are the recommendations from RBL side? And how does the NAND manufacturers use the memory layout for marking bad blocks from factory?
I wonder, is there a more detailed documentation for this issues and the RBL especially? Currently I read the TMS320DM365 Data Sheet, the TMS320DM36x Digital Media System-on-Chip (DMSoC) ARM Subsystem User's Guide and the TMS320DM36x Digital Media System-on-Chip (DMSoC) Asynchronous External Memory Interface (EMIF) User's Guide.
Thanks,
Andi