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DDR3 hyperlinx slow driver simulation fails

Other Parts Discussed in Thread: 66AK2H12

We have a board layout that satisfies the routing rules in the document "DDR3 Design Requirements for KeyStone Devices Application Report" (SPRABI1B May 2014, pages 27-29). After running a simulation on the complete DDR3 bus using HyperLynx, we found that most of the address, command, and control signals failed with not enough setup time for the Slow process corner case. All signals for all cases have plenty of hold time. Typical and Fast corners passed in all cases.

 Worst case setup time margin is about -100ps (Slow corner); worst case hold margin is about +240ps (Fast corner). The average setup time margin is about -70ps for Bank A, and about -77ps for Bank B.

 It seems to me that making the clock traces longer between the KeyStone and first RAM device will solve this, though it would violate the length requirements the above document spells out. I would have to make the clock traces around 400 mils longer to delay the signal by 70ps, which seems like way too much. To delay the clock by 100ps, the traces would need to be upwards of 570mils long, which definitely seems like too much.

 How hard should we try to satisfy the simulation for the Slow process corner case which means going way out of spec for length matching? The process corner is an outer limit, after all.

  • Hi Shervin,
    Please provide the DSP part number (Keystone I or II). Thank you.
  • We are using a keystone II (66AK2H12) SOC.

    Thanks
    Shervin
  • Shervin,

    The DDR3 IBIS models are provided for signal integrity simulations.  They are not accurate for timing analysis.  Timing information is not provided for the DDR3 interface.  Please see below from the Data Manual:

    10.9.3 DDR3 Memory Controller Electrical Data/Timing
    The DDR3 Implementation Guidelines Application Report in 2.6 ‘‘Related Documentation from Texas Instruments’’ on page 19 specifies a complete DDR3 interface solution as well as a list of compatible DDR3 devices. The DDR3 electrical requirements are fully specified in the DDR3 Jedec Specification JESD79-3C. TI has performed the simulation and system characterization to ensure all DDR3 interface timings in this solution are met. Therefore, no electrical data/timing information is supplied here for this interface.
    Note—TI supports only designs that follow the board design guidelines outlined in the application report.

    This excerpt is from 10.9.1 DDR3 Memory Controller Device-Specific Information:
    The approach to specifying interface timing for the DDR3 memory bus is different than on other interfaces such as I2C or SPI. For these other interfaces, the device timing was specified in terms of data manual specifications and I/O buffer information specification (IBIS) models. For the DDR3 memory bus, the approach is to specify compatible DDR3 devices and provide the printed circuit board (PCB) solution and guidelines directly to the user.

    Tom