Hi all,
I want to configure the EMIF for the IS46TR16640BL DDR3 memory with the EMIF Tool Revision 2.0.2.
http://www.issi.com/WW/pdf/43-46TR16640B-81280BL.pdf
These are my basic settings:
1A) System application details: | |||||
Detail | Description | Value | Units | ||
1 | Company / Board Name / Revision (Ex: TI_EVM_revC) | TDA3_IS46TR16640BL | - | ||
2 | TI SOC Part Number | TDA3x_ABF | - | ||
3 | SYS_CLK1 Frequency | 20 | MHz | ||
4 | Required EMIF Interfaces | 1 | - | ||
5 | DDR Memory Type | DDR3/L | - | ||
6 | DDR Memory Frequency | 532 | MHz | ||
7 | DDR Data Bus Width Per EMIF | 32 | Bits | ||
8 | Leveling Technique: "S/W" or "H/W" | H/W | - | ||
9 | Max DRAM Operating Temperature | <= 105 | °C | ||
10 | Enable ECC (May not apply to all EMIFs) | Yes | - | ||
11 | ECC Region 1: System Start Address | 80000000 | Enabled | NOTE: Values entered into details 11 - 14 must be a hexadecimal value between "80000000" and "FFFFFFFF". Set start and end address to equal values to disable region. | |
12 | ECC Region 1: System End Address | 8FFFFFFF | Enabled | ||
13 | ECC Region 2: System Start Address | 80000000 | Disabled | ||
14 | ECC Region 2: System End Address | 80000000 | Disabled | ||
1B) DDR memory specifications: | |||||
Detail | Description | Value | Units | NOTE: Detail 18 is only used to determine the "JEDEC" values defined in worksheet "Step3-DDRTimings". Detail 18 does not correspond to the actual CAS latency programmed to the EMIF. | |
15 | Speed Bin: Data Rate | 1066 | MHz | ||
16 | Density | 1 | Gb | ||
17 | Width | 16 | Bits | ||
18 | Speed Bin: CAS Latency @ 1066 MHz data rate | 7 | ntCK | ||
1C) DDR memory I/O settings (termination / output driver impedance): | |||||
Detail | Description | Value | Units | TI EVM Values** | |
19 | ODT / Rtt_Nom | RZQ/4 | Ohms | RZQ/4 | |
20 | Dynamic ODT / Rtt_Wr | Disabled | Ohms | Disabled | |
21 | Output Driver Impedance | RZQ/7 | Ohms | RZQ/7 | |
1D) EMIF controller I/O settings (termination / output driver impedance / and slew rate): | |||||
Detail | Description | Value | Units | TI EVM Values** | |
22 | ODT | 60 | Ohms | 60 | |
23 | Slew Rate: Addr/Ctrl/Clk | Fastest: SR[2:0] = 0b000 | - | Fastest: SR[2:0] = 0b000 | |
24 | Slew Rate: Data/Strobe | SR[2:0] = 0b010 | - | SR[2:0] = 0b010 | |
25 | Output Driver Impedance: Addr/Ctrl/Clk | 40 | Ohms | 40 | |
26 | Output Driver Impedance: Data/Strobe | 48 | Ohms | 48 |
Q1:
I want set the refresh interval for max temperature range of -40°C to +105°C. tREFI is defined to 3.9µs and tRAS is 9*tREFI.
tRAS (max) | Active to Precharge command period (Max Value) | 35100 | 8 | tREFI intervals | 8 | |
tREFI | Average periodic refresh interval | 3900 | 2074 | tCK | 1037 |
But why the recomanded value is 1037 for tREFI as EMIF value?
Q2:
How much affects increasing the refresh intervall the memory bandwith. Is there a performance test?
Q3:
I am not sure if it's relevant to enable dynamic ODT on our custum HW design, cause it is not recomanded for TDA3-EVM. Is the unused dynamic ODT compensated by HW-Leveling?
Q4
Changing e,g, no "26 Output Driver Impedance: Data/Strobe" has no effect on the generated registers. Why? I could not find the apropriate register in the TRM.
Best regards,
Milan