TDA4VM: ADC/GPIO internal structure and parameters for WCCA calculate

Yutai,

The electrical characteristics of the GPIO and ADC are documented in the device data sheet.

Hi Kyle

The datasheet for ADC don't have Clamping diodes forward voltage ; ADC injection current. ; leakage current; leakage resistance…

The datasheet for LVCMOS BUFFER don't have internal pull up / pull down resistor value and internal proection diode info.

Thanks

Yutai

Yutai,

Both the GPIO and ADC inputs do have input clamping diodes to protect for ESD damage.  However, those diodes are not guaranteed to protect the IO in the case of an over voltage scenario.

Specifically, we specify in the Absolute Maximum section that these IOs are not fail safe, and a voltage higher than VDD+0.3V must not be applied to these IOs irrespective of the current level.  So if VDD is currently unpowered then the maximum IO voltage can be 0.3V.  And if VDD is powered at 3.3V then the maximum IO voltage can be 3.6V.

For ADC: Leakage current is specified.  I''m double checking if that value is correct.

For GPIO: The internal pull-up/down varies is nominally 22 kOhms, with min=15k and max=30kOhms.

Regards,

Kyle

Kyle

For clamping diodes: as you mention the voltage need keep in VDD+0.3V. So that means TDA4VM diode forward voltage is 0.3V ?

For ADC: I  need ADC injection current / leakage current data from TDA4VM. 

e.g. General ADC AN in below.  Can you please share your TDA4VM ADC applicaiton notes for me ?

Thanks

Yutai

Yutai, I'm still following up on the ADC leakage current.

Regards,

Kyle

Kyle

Waiting your update info about leakage current and injection current. 

Can you please also share your TDA applicaiton notes about ADC. 

Thanks

Yutai