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TPS50601-SP: External Bootstrap Schottky and External Switching Node Catch Schottky.

Part Number: TPS50601-SP

I have a customer who as floated a proposed circuit that includes an external bootstrap Schottky from Vin-to-BOOT and an external Schottky catch diode from PH-to-PGND for the basic TPS50601-SP application circuit shown in Figure 29 on Page 28 of the TPS50601-SP data sheet (January 2015):

I am of the opinion that neither of these components is necessary, as they will only add losses in the circuit: from Cj losses for the devices required to provide the appropriate Vf's at each location. This is particulatly so for the catch diode since a device rated for 12A (6A, derated) over temperature will have a not-insignificant Cj that will be presented at the switching node, and thus incur AC charging losses by the 50601 IC. Also, since the 50601 senses output (inductor) current in both directions, will the presence of the external catch diode with a lower clamping voltage interfere with the proper operation of the IC? {I don't think either diode is necessary, as they ONLY incur losses to the circuit without much benefit, but I'd like TI Application's opinion on this!]

Finally, is the back-side of the die metalized, and what is the metalization?? Also, should the back-side be connected to ground. In the DLA SMD specification on Page 19, the Table in Figure A-1 "Die bonding pad locations and electrical functions" states that "Substrate is not connected". However in the TI data sheet, the thermal pad on the packaged IC's require that this pad be connected to power ground externally. Should the die-back-side be connected to ground or left floating?? [I think it should be grounded, but I just want to make sure!]

Any insight into these questions is GREATLY appreciated.

  • Hi Anthony,

    First of all there is no datasheet dated January 2015. online datasheet is dated Dec. 2015. Was there supposed to a schematic attached on your post?

    1. Vin to Boot diode is only needed if your input voltage is 3.3V nominal. Reason being as highlighted in the datasheet boot-phase UVLO is typically 2.2V and 3V max. Thus we need to minimize the voltage drop from Vin to Boot pin. when operating with low PVIN/Vin voltage.
    2. For low Vin voltage 3.3V when using the schottky diode from Vin to Phase one must also add a bleeder on the output to ensure output does not drift up.
    3. Vin to boot diode is not necessary if Vin voltage is higher i.e. 5V nominal.
    4. Diode from phase to ground one can leave out if so desired. However this diode helps with reverse recovery and will help with improved efficiency.
    5. Back side of the die is not metalized. Back side of the packaged device ( thermal pad) must be grounded.
    6. There is an error in DLA SMD specification and it will be corrected.
    7. Page 10 of DLA datasheet indicates "Thermal pad (analog ground) must be connected to PGND external to the package" this is correct.
    8. Page 19 of DLA datasheet indicates "Substrate is not to be connected" this is not correct.
    9. As you have indicated die backside should be connected to ground and not left floating.


    Hope this address your concerns.
  • Hi Ramesh,

    Thanks for the prompt reply!

    I have another question regarding the backside of the die. If it's not metalized, how is the backside attached to the packaged product?? Is it Au-Si eutectic...or is a electrical/thermal-conductive epoxy utilized?

    What does TI recommend for the die attach, considering that ~3W may be dissipated in the die at lower output voltages (1.2V) at maximum load (6A), when the efficiency is ~73%??

    BTW...did you ever "visit " Marlborough, MA for an extended time in the early 90's???

    Best regards...

    Tony

  • Hi Anthony,


    TI uses silver glass die attach - Henkel/Loctite QM12555. It is electrically and thermally conductive.
  • Hi Anthony,

    minor correction it should be Henkel/Loctile QMI 3555.