Hello
When we are in the selection of external FETs, Do we need to add bi-deirection Zener diode to protect the High Side FET Gate-Source?
Because the VGS maximum rating of the FET we are trying to use is +/- 20V which is the same as your EVM board uses. But the Vin could rate up to 60V which means in the SW node, during the on time, the potential would be 60V and the HDRV max is about 8V. Their voltage difference is about 52V which is larger than the VGS maximum rating of High Side FET.
How about Low side FET. Do we also need some protection components to protect it from damage?
(In your EVM board there is no such protection. And no related comments about the FETs protection).
Some addtional information
Vin:16-48V
Vout:3.3V
Iout=8V
Fsw=250kHz
Thanks.
