Part Number: CSD17573Q5B
Customer notice that there is a residual voltage measured on the MOSFET source terminal when it is turned OFF and the amplitude increased over temperature as table shown below.
Below is customer's circuit, the Gate-Source terminal is connected with a 10M resistor, during OFF state the Gate terminal is grounded with a 2K resistor. The Drain is connected to a 8V battery, the Source pin of MOSFET is connected to system side.
May we know at what temperature would the MOSFET VDS completely breakdown? Please advise
Application: Battery Pack for servo system backup power
Customer: in TW
Discharge MOSFET using CSD17573Q5B
Please find the enclosure for the Vds data with temp and partial schematic
In reply to Brian Wang0928:
I am not entirely sure I understand your question but I have forwarded it to our apps team.
Naturally, the breakdown voltage of the FET increases with temperature, but I do not think this is what you are asking about. As long as you stay under the max junction temp of the FET (150, or 125deg if you want some margin), you should be fine.
I will let you know what our apps team's response is.
Product Marketing Engineer, Mid-Voltage FET
(610) 849 5114
In reply to Brett Barr1:
Thanks for reply. Please help on below questions following up to this.
1. In the D/S, it says the IDSS=1uA at Vgs=0V and Vds=24V at 25degree. how about the IDSS at 125degree?
2. In this application circuit, there is a 10M Ohm resisor connected between Source pin and Gate pin, and there is a 10K Ohm resistor connected between Gate pin Groundig pin. The current flow of the IDSS should go into the 10M+2K Ohm, right? What's the source pin voltage with these connections at 125degree?
The Source pin residual voltage of MOSFET Must to be under 100mV at TA>70degree as specified from end-customer HPE.
I'd rather not share this data on a public forum, please email myself and Kevin O'Connell directly.
However, if all this current is flowing through 10Mohm resistor, it is almost certainly the exponential increase in IDSS is what is causing this increase in voltage on the switch node. This problem will only increase with temperature.
All content and materials on this site are provided "as is". TI and its respective suppliers and providers of content make no representations about the suitability of these materials for any purpose and disclaim all warranties and conditions with regard to these materials, including but not limited to all implied warranties and conditions of merchantability, fitness for a particular purpose, title and non-infringement of any third party intellectual property right. TI and its respective suppliers and providers of content make no representations about the suitability of these materials for any purpose and disclaim all warranties and conditions with respect to these materials. No license, either express or implied, by estoppel or otherwise, is granted by TI. Use of the information on this site may require a license from a third party, or a license from TI.
TI is a global semiconductor design and manufacturing company. Innovate with 100,000+ analog ICs andembedded processors, along with software, tools and the industry’s largest sales/support staff.