This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

High power and High frequency Mosfet and H Bridge

Other Parts Discussed in Thread: UCC21520

Dear TI Support,

We need to develop an H Bridge using your components.

The input of the H Bridge will be a regulable 0-48V voltage and two PWM signals created by our microprocessor that interact with a driver like the Infineon IR2110 drive the mosfet of the H Bridge. The H Bridge will be connected in the output with a coil / transformer to generate a sinusoidal high voltage signal (1200V peak to peak. 1200V is the peak to peak voltage of the sinusoidal signal on the second side of the transformer).

The frequency of the sinusoidal signal will be in the tange 100kHz – 3MHz depending the regulation of the two PWM signals, generated by microprocessor, applied to the mosfet of the H bridge.

Eventually we could generate the four signals for the control of the H Bridge instead of using a driver similar to IR2110.

Which components and which solution do you suggest to us?

Let me know!

Best regards

  • Hi Ennio,

    Thanks for your question! Let me take a look at this device to see what parts we have that will best fit. Are you looking for a half bridge driver with a single input for internal dead time? Do you require isolation? If not ucc2771x is 600v hb driver that should work similar to ir2110 however its only up to 600v bus. For higher bus voltage we might need to look at an isolated driver like ucc2152x.

    Thanks,
  • Dear Jeffery Mueller,

    thank you very much for the feedback.

    Now we are using two IR2110 and four IRFP250N to create the H bridge connected to the primary of the transformer.

    The problem of the IR2110 is that it has some thermal problem with frequency higher than 1MHz.

    Could your driver work well in the range 200kHz - 3 MHz?

    Let me know!

    Best regards

  • Hi Ennio,

    Thanks for your update. UCC21520 has a significantly smaller Rja than IR2110 which allows the package to dissipate more heat, which is already a good determination factor with equal test conditions. What is your drive voltage? will you be using a gate resistor? I will do some calculations to see if it exceeds max power dissipation of the device.

    Thanks,
  • Dear Jeff,

    we drive the mosfet with about 48V, but the voltage peak during the switch could arrive up to 200V for about 20ns.

    Now we are using with IRFP250N a gate resistor.

    Let me know!

    Best regards

  • Hi Ennio,

    wow, sounds pretty crazy. your flyback on the transformer looks to be amplified by the turns ratio. You can first try snubbing the over shoot at the source (secondary side and even primary as well). You can then try slowing down the di/dt to avoid such a high dv/dt at the switch node this will help with the existing overshoot by adding some resistance to the drive loop which kinda cancels out any parasitic loop inductance. Finally and most important you can look into a DGN or power pad package so you can significantly reduce the Rja and sink more heat away from your part.

    With a working system check to see your output of the driver, and the supply voltage so we can see if things look normal and with spec. We can also see the switch node to observe the fet fully turn in on. I think thats what we want to do, make sure the fet is being turned on completely as to not make to much fet conduction losses, excessive conduction losses could be raising the juction temp of the driver which is what needs to be kept below 150C. If you are worried about power dissipation and want to double check your system check out section 2.7 www.ti.com/.../slua618.pdf

    whats your end equipment? what will this circuit be doing in your syste?
    Why do you think IR2110 will advantages to your system?
    please let me know if you have any more questions.
    Thanks,
  • Dear Jeff,

    thank you very much for the feedback.

    This machine has to create an alternate sinusoidal signal with a maximum peak to peak voltage of 1200V on a load / impedance between 10 ohm and 1000 ohm.

    Let me know!

    Best regards

  • Hi Ennio,

    Frequencies past 1Mhz and 600V and above which requires isolation requires a driver that might be outside our realm. You should be able to use our drivers with no issue up to this frequency.

    Thanks
  • Dear Jeffrey,
    thank you very much for the feedback.
    Do you have something similar to the Infineon Eice Driver 2EDi?
    Let me know!
     
    Best regards
  • Hi Ennio,

    Check out our dual channel isolated gate drivers. The UCC2x52x devices are most similar to Eice.
    www.ti.com/.../products.html

    Hope this help with your search, let me know if you have any more questions.
    Thanks,
  • Dear Jeff,

    ok! thank you very much!

    Best regards

    Ennio