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[FAQ] TIDA-00961: What are the benefits of using LMG3410R070 in the implementation of high density power solutions using GaN?

Part Number: TIDA-00961

What are the benefits of using LMG3410R070 (GaN power stage with integrated driver and protection) in the implementation of high density power solutions using GaN?

  • TIDA-00961 is a TI Reference Design that demonstrates the implementation of high frequency Critical-Conduction-Mode (CrM) Totem-pole power factor correction (PFC), which is a simple approach for designing high density power solutions using GaN.

    LMG3410R070 (GaN power stage with integrated driver and protection) enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. The LMG341xR070 integrated gate drive, which enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Over-temperature shutdown prevents thermal runaway

    TIDA-00961 takes advantage of LMG4310's integrated driver that is very essential at the 1MHz switching frequency of this design. Its 100V/ns switching capability and zero reverse recovery helps in realizing high power density, high efficiency and reliable solution. The readily available daughter card (Buy from TI) helps in avoiding high frequency layout issues.

    For additional information about this topic, please refer to section 2.3 "System Design Theory" of the User Guide for TIDA-00961.

    You can also download the design files (BOM, Schematic, Gerber) for this reference design from the TIDA-00961 folder.

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